The exciton tunneling in ZnCdSe/ZnSe asymmetric double quantum well

	The exciton tunneling in ZnCdSe/ZnSe asymmetric double quantum well
其他题名	论文其他题名
	Yu G. Y.; Fan X. W.; Zhang J. Y.; Yang B. J.; Shen D. Z.; Zhao X. W.
	1998
发表期刊	Journal of Electronic Materials
ISSN	0361-5235
卷号	27 期号:9 页码:1007-1009
摘要	Photoluminescence spectra of asymmetric double-quantum-well structure are studied in this paper. We show the excitation power dependence of exciton tunneling. Due to the different tunneling time of electrons and holes, space-charge effect is observed.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25349
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yu G. Y.,Fan X. W.,Zhang J. Y.,et al. The exciton tunneling in ZnCdSe/ZnSe asymmetric double quantum well[J]. Journal of Electronic Materials,1998,27(9):1007-1009.
APA	Yu G. Y.,Fan X. W.,Zhang J. Y.,Yang B. J.,Shen D. Z.,&Zhao X. W..(1998).The exciton tunneling in ZnCdSe/ZnSe asymmetric double quantum well.Journal of Electronic Materials,27(9),1007-1009.
MLA	Yu G. Y.,et al."The exciton tunneling in ZnCdSe/ZnSe asymmetric double quantum well".Journal of Electronic Materials 27.9(1998):1007-1009.