GROWTH OF GAXIN1-XAS1-YSBY ALLOYS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

	GROWTH OF GAXIN1-XAS1-YSBY ALLOYS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
其他题名	论文其他题名
	Li S. W.; Jin Y. X.; Zhou T. M.; Zhang B. L.; Ning Y. Q.; Jiang H.; Yuan G.
	1995
发表期刊	Journal of Electronic Materials
ISSN	0361-5235
卷号	24 期号:11 页码:1667-1670
摘要	The quaternary GaInAsSb alloy system with direct band gaps adjustable in wavelength from 1.7 to 4.3 mu m, which may provide the basis for emitters and detectors over this entire region, was studied. Alloys of GaInAsSb were grown lattice-matched on GaSb substrates by metalorganic chemical vapor deposition using a conventional atmospheric pressure horizontal reactor. The properties of the GaInAsSb alloys were characterized by single crystal x-ray rocking curves, the double crystal x-ray rocking curves, the photoluminescence and infrared absorption. A preliminary study of the capabilities of scanning electron acoustic microscopy in the characterization of GaInAsSb alloy has been made, some observations are briefly compared with scanning electron microscopy.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25445
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li S. W.,Jin Y. X.,Zhou T. M.,et al. GROWTH OF GAXIN1-XAS1-YSBY ALLOYS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION[J]. Journal of Electronic Materials,1995,24(11):1667-1670.
APA	Li S. W..,Jin Y. X..,Zhou T. M..,Zhang B. L..,Ning Y. Q..,...&Yuan G..(1995).GROWTH OF GAXIN1-XAS1-YSBY ALLOYS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION.Journal of Electronic Materials,24(11),1667-1670.
MLA	Li S. W.,et al."GROWTH OF GAXIN1-XAS1-YSBY ALLOYS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION".Journal of Electronic Materials 24.11(1995):1667-1670.

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