Light-Harvesting in n-ZnO/p-Silicon Heterojunctions

	Light-Harvesting in n-ZnO/p-Silicon Heterojunctions
其他题名	论文其他题名
	Li L.; Shan C. X.; Li B. H.; Yao B.; Shen D. Z.; Chu B.; Lu Y. M.
	2010
发表期刊	Journal of Electronic Materials
ISSN	0361-5235
卷号	39 期号:11 页码:2467-2470
摘要	Zinc oxide (ZnO) films were deposited onto Si to form n-ZnO/p-Si heterojunctions. Under the illumination of by both ultraviolet (UV) light and sunlight, obvious photovoltaic behavior was observed. It was found that the conversion efficiency of the heterojunctions increased significantly with increasing thickness of the ZnO film, and the mechanism for light-harvesting in the heterojunctions is discussed. The results suggest that ZnO films may be helpful to increasing the harvesting of UV photons, thus decreasing the thermalization loss of UV energy in Si-based solar cells.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26100
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li L.,Shan C. X.,Li B. H.,et al. Light-Harvesting in n-ZnO/p-Silicon Heterojunctions[J]. Journal of Electronic Materials,2010,39(11):2467-2470.
APA	Li L..,Shan C. X..,Li B. H..,Yao B..,Shen D. Z..,...&Lu Y. M..(2010).Light-Harvesting in n-ZnO/p-Silicon Heterojunctions.Journal of Electronic Materials,39(11),2467-2470.
MLA	Li L.,et al."Light-Harvesting in n-ZnO/p-Silicon Heterojunctions".Journal of Electronic Materials 39.11(2010):2467-2470.