Electrical properties of N-doped ZnO grown on sapphire by P-MBE

	Electrical properties of N-doped ZnO grown on sapphire by P-MBE
其他题名	论文其他题名
	Wang X.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Yao B.; Zhang J. Y.; Zhao D. X.; Fan X. W.; Tang Z. K.
	2007
发表期刊	Semiconductor Science and Technology
ISSN	0268-1242
卷号	22 期号:2 页码:65-69
摘要	doped ZnO samples were grown on sapphire substrate by plasma-assisted molecular beam epitaxy (P-MBE) method. The electrical properties of the samples were investigated by temperature-dependent Hall measurement. It was found that the carrier concentration and mobility of the samples showed some unstable characteristics under different magnetic fields at a certain temperature. However, the conductivity was a much more stable parameter. By fitting the dependence of conductivity on temperature and theoretical calculating, it was believed that the conduction mechanism was possibly the mix of band and hopping conduction mechanisms. The coexistence of a huge density of donor and acceptor defects was considered to cause the instability of some electrical properties (carrier concentration and mobility) and the appearance of the hopping conduction mechanism in N-doped ZnO samples.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26627
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang X.,Lu Y. M.,Shen D. Z.,et al. Electrical properties of N-doped ZnO grown on sapphire by P-MBE[J]. Semiconductor Science and Technology,2007,22(2):65-69.
APA	Wang X..,Lu Y. M..,Shen D. Z..,Zhang Z. Z..,Li B. H..,...&Tang Z. K..(2007).Electrical properties of N-doped ZnO grown on sapphire by P-MBE.Semiconductor Science and Technology,22(2),65-69.
MLA	Wang X.,et al."Electrical properties of N-doped ZnO grown on sapphire by P-MBE".Semiconductor Science and Technology 22.2(2007):65-69.

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