Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films

	Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films
其他题名	论文其他题名
	Wei Z. P.; Yao B.; Wang X. H.; Zhang Z. Z.; Lu Y. M.; Shen D. Z.; Li B. H.; Zhang J. Y.; Zhao D. X.; Fan X. W.; Tang Z. K.
	2007
发表期刊	Journal of Materials Research
ISSN	0884-2914
卷号	22 期号:10 页码:2791-2795
摘要	A wurtzite nitrogen-doped MgZnO (MgZnO:N) film was grown by plasma-assisted molecular-beam epitaxy (PAMBE) on c-plane sapphire using radical NO as oxygen source and nitrogen dopant. The as-grown film shows n-type conduction at room temperature, but transforms into p-type conduction after annealed. Photoluminescence (PL) spectrum measured at 80 K is dominated by neutral donor-bound exciton emission (D X) located at 3.522 eV for the n-type MgZnO:N film, but by neutral acceptor-bound exciton emission (A X) located at 3.515 eV for the p-type MgZnO:N film. By fitting exciton emission intensity of temperature-dependent PL spectra, the binding energies of the D X and A X were estimated to be 32 and 43 meV, respectively. Based on the energy shift of exciton emission, the band gap of the MgZnO:N film is estimated to be 3.613 eV, which is 179 meV larger than that of ZnO. Using the Haynes rule, the acceptor energy level of the MgZnO:N film was evaluated to be about 176 meV above the valence band.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26644
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wei Z. P.,Yao B.,Wang X. H.,et al. Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films[J]. Journal of Materials Research,2007,22(10):2791-2795.
APA	Wei Z. P..,Yao B..,Wang X. H..,Zhang Z. Z..,Lu Y. M..,...&Tang Z. K..(2007).Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films.Journal of Materials Research,22(10),2791-2795.
MLA	Wei Z. P.,et al."Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films".Journal of Materials Research 22.10(2007):2791-2795.

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