Ultrafast carrier dynamics in CuInS2 quantum dots

	Ultrafast carrier dynamics in CuInS2 quantum dots
	Sun J. H.; Zhu D. H.; Zhao J. L.; Ikezawa M.; Wang X. Y.; Masumoto Y.
	2014
发表期刊	Applied Physics Letters
ISSN	ISBN/0003-6951
卷号	104 期号:2 页码:4
摘要	The ultrafast carrier dynamics in CuInS2 (CIS) quantum dots (QDs) was studied by means of femtosecond transient absorption (TA) spectroscopy. The size-dependent 1S transition energy determined from bleaching spectra is in agreement with that calculated on the finite-depth-well model in the effective mass approximation. The TA bleaching comes from filling of electron quantized levels, allowing us to know the dynamics of the 1S electron in CIS QDs. The sub-100-ps electron trapping at surface defects in bare QDs accelerates with decreasing QD size, while is effectively suppressed in well-passivated CIS/ZnS core/shell QDs. (C) 2014 AIP Publishing LLC.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44497
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sun J. H.,Zhu D. H.,Zhao J. L.,et al. Ultrafast carrier dynamics in CuInS2 quantum dots[J]. Applied Physics Letters,2014,104(2):4.
APA	Sun J. H.,Zhu D. H.,Zhao J. L.,Ikezawa M.,Wang X. Y.,&Masumoto Y..(2014).Ultrafast carrier dynamics in CuInS2 quantum dots.Applied Physics Letters,104(2),4.
MLA	Sun J. H.,et al."Ultrafast carrier dynamics in CuInS2 quantum dots".Applied Physics Letters 104.2(2014):4.