2D Phosphorene_ Epitaxial Growth and Interface Engineering for Electronic Devices

doi:10.1002/adma.201802207

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	2D Phosphorene_ Epitaxial Growth and Interface Engineering for Electronic Devices
	Zhang, J. L.; Han, C.; Hu, Z. H.; Wang, L.; Liu, L.; Wee, A. T. S.; Chen, W.
	2018
发表期刊	Advanced Materials
ISSN	0935-9648
卷号	30 期号:47 页码:11
摘要	Black phosphorus (BP), first synthesized in 1914 and rediscovered as a new member of the family of 2D materials in 2014, combines many extraordinary properties of graphene and transition-metal dichalcogenides, such as high charge-carrier mobility, and a tunable direct bandgap. In addition, it displays other distinguishing properties, e.g., ambipolar transport and highly anisotropic properties. The successful application of BP in electronic and optoelectronic devices has stimulated significant research interest in other allotropes and alloys of 2D phosphorene, a class of 2D materials consisting of elemental phosphorus. As an atomically thin sheet, the various interfaces presented in 2D phosphorene (substrate/phosphorene, electrode/phosphorene, dielectric/phosphorene, atmosphere/phosphorene) play dominant roles in its bottom-up synthesis, and determine several key characteristics for the devices, such as carrier injection, carrier transport, carrier concentration, and device stability. The rational design/engineering of interfaces provides an effective way to manipulate the growth of 2D phosphorene, and modulate its electronic and optoelectronic properties to realize high-performance multifunctional devices. Here, recent progress of the interface engineering of 2D phosphorene is highlighted, including the epitaxial growth of single-layer blue phosphorus on different substrates, surface functionalization of BP for high-performance complementary devices, and the investigation of the BP degradation mechanism in ambient air.
关键词	2D phosphorene electronic devices epitaxial growth interface engineering layer black phosphorus 2-dimensional materials band-gap transport-properties carrier mobility blue phosphorus graphene surface functionalization semiconductors Chemistry Science & Technology - Other Topics Materials Science Physics
DOI	10.1002/adma.201802207
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60857
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Zhang, J. L.,Han, C.,Hu, Z. H.,et al. 2D Phosphorene_ Epitaxial Growth and Interface Engineering for Electronic Devices[J]. Advanced Materials,2018,30(47):11.
APA	Zhang, J. L..,Han, C..,Hu, Z. H..,Wang, L..,Liu, L..,...&Chen, W..(2018).2D Phosphorene_ Epitaxial Growth and Interface Engineering for Electronic Devices.Advanced Materials,30(47),11.
MLA	Zhang, J. L.,et al."2D Phosphorene_ Epitaxial Growth and Interface Engineering for Electronic Devices".Advanced Materials 30.47(2018):11.

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