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Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
浏览  |  Adobe PDF(2069Kb)  |  收藏  |  浏览/下载：269/66  |  提交时间：2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide  
Photoelectric Properties of N Doped MgZnO Thin Films 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2019, 卷号: 40, 期号: 8, 页码: 956-960
作者:  P.-C.Zhao;  Z.-Z.Zhang;  B.Yao;  B.-H.Li;  X.-L.Li
caj(1183Kb)  |  收藏  |  浏览/下载：365/81  |  提交时间：2020/08/24
Thin films,Carrier mobility,II-VI semiconductors,Light emission,Magnesium,Molecular beam epitaxy,Molecular beams,Nitrogen,Photoelectricity,Sapphire,Semiconductor alloys,Semiconductor doping,Zinc oxide  
HDR imaging method of overcoming full well limitation for push-broom remote sensing cameras 期刊论文
Guangxue Jingmi Gongcheng/Optics and Precision Engineering, 2018, 卷号: 26, 期号: 4, 页码: 944-950
作者:  Sun, Wu;  Han, Cheng-Shan;  Jin, Xue-Fei;  Lu, Heng-Yi;  Liu, Hai-Long
浏览  |  Adobe PDF(908Kb)  |  收藏  |  浏览/下载：435/142  |  提交时间：2019/09/17
Remote sensing  Cameras  CMOS integrated circuits  Function evaluation  Integration  Metals  MOS devices  Oxide semiconductors  Time delay